Testing of semiconductor devices and devices, and designs thereof

ABSTRACT

In accordance with an embodiment of the present invention, a method of testing a plurality of semiconductor devices includes applying a stress voltage having a peak voltage on a shield line disposed over a substrate. The substrate has functional circuitry of a semiconductor device. A fixed voltage is applied to a first metal line disposed above the substrate adjacent the shield line. The first metal line is coupled to the functional circuitry and is configured to be coupled to a high voltage node during operation. The peak voltage is greater than a maximum fixed voltage. The shield line separates the first metal line from an adjacent second metal line configured to be coupled to a low voltage node during operation. The method further includes measuring a current through the shield line in response to the stress voltage, determining the current through the shield line of the semiconductor device, and based on the determination, identifying the semiconductor device as passing the test.

This application is a Divisional Application of application Ser. No.14/134,847 filed on Dec. 19, 2013, which is incorporated herein byreference.

TECHNICAL FIELD

The present invention relates generally to semiconductor devices, andmore particularly to testing of semiconductor devices and devices, anddesigns thereof.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductive layers of material over asemiconductor substrate, and patterning the various layers usinglithography to form circuit components and elements thereon.

One of the challenges associated with semiconductor manufacturingrelates to product yield and/or reliability. Consumers of semiconductordevices expect a certain level of reliability from their devices. Thisis even more critical when the semiconductor device is used in safetycritical applications. However, a product may fail during its lifetimedue to defects introduced during manufacturing.

Reliability issues may also result in failure of the process from beingqualified, poor yield at the semiconductor device fabrication facility,and/or failure at the field, either of which may result in productrecalls and/or loss in revenue. These problems become even moreexacerbated in case of high voltage applications.

SUMMARY OF THE INVENTION

In accordance with an embodiment of the present invention, asemiconductor device comprises a first metal line disposed over asubstrate comprising circuitry, and a second metal line disposedadjacent the first metal line. The first metal line and the second metalline are metal lines configured to supply different voltages to thecircuitry. A third metal line is disposed between the first metal lineand the second metal line. The third metal line is not part of anyfunctional circuit in the substrate and not coupled to any potentialnode.

In accordance with an embodiment of the present invention, a method oftesting a plurality of semiconductor devices comprises applying a stressvoltage having a peak voltage on a shield line disposed over asubstrate, the substrate comprising functional circuitry of asemiconductor device. A fixed voltage is applied to a first metal linedisposed above the substrate adjacent the shield line. The first metalline is coupled to the functional circuitry and is configured to becoupled to a high voltage node during operation. The peak voltage isgreater than a maximum fixed voltage. The shield line separates thefirst metal line from an adjacent second metal line configured to becoupled to a low voltage node during operation. The method furtherincludes measuring a current through the shield line in response to thestress voltage, determining the current through the shield line of thesemiconductor device, and based on the determination, identifying thesemiconductor device as passing the test.

In accordance with an embodiment of the present invention, a method ofdesigning a semiconductor device comprises identifying a region in alayout of the semiconductor device, the region comprising a first metalline configured to be coupled to a high voltage node and a second metalline configured to be coupled to a low voltage node. The method furtherincludes modifying the layout of the semiconductor to include a thirdmetal line between the first metal line and the second metal line. Thethird metal line has an external contact pad but not being part of andcoupled to any functional circuit of the semiconductor device.

The foregoing has outlined rather broadly the features of an embodimentof the present invention in order that the detailed description of theinvention that follows may be better understood. Additional features andadvantages of embodiments of the invention will be describedhereinafter, which form the subject of the claims of the invention. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiments disclosed may be readily utilized as a basisfor modifying or designing other structures or processes for carryingout the same purposes of the present invention. It should also berealized by those skilled in the art that such equivalent constructionsdo not depart from the spirit and scope of the invention as set forth inthe appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawing, in which:

FIG. 1, which includes FIGS. 1A and 1B, illustrates defect densityassociated failure of different metal line structures;

FIG. 2, which includes FIGS. 2A and 2B, illustrates metal linesseparated by a shield line in accordance with an embodiment of thepresent invention, wherein FIG. 2A illustrates a vertical configurationand FIG. 2B illustrates a horizontal configuration;

FIG. 3 illustrates a flow chart of implementing the diagnostic methoddescribed in various embodiments of the present invention;

FIG. 4 illustrates a shield region formed around a power line inaccordance with an embodiment of the present invention;

FIG. 5, which includes FIGS. 5A and 5B, illustrates a shield regionformed around a power line in accordance with an embodiment of thepresent invention, wherein FIG. 5A illustrates a cross-sectional viewand FIG. 5B illustrates a top view;

FIG. 6, which includes FIGS. 6A and 6B, illustrates testing asemiconductor device in accordance with an embodiment of the presentinvention;

FIG. 7 illustrates an alternative embodiment of testing the isolationregion around the high voltage power line;

FIG. 8, which includes FIGS. 8A-8C, illustrates top views of a highvoltage line running adjacent a low voltage line in accordance withembodiments of the present invention;

FIG. 9 illustrates an alternative structure of the shield line inaccordance with embodiments of the present invention;

FIG. 10, which includes FIGS. 10A-10F, illustrates the semiconductordevice during various stages of processing in accordance with anembodiment of the present invention;

FIG. 11, which includes FIGS. 11A-11F, illustrates the semiconductordevice during various stages of processing in accordance with anembodiment of the present invention, wherein FIGS. 11A, 11C-11Fillustrate cross-sectional view and FIG. 11B illustrates a top view;

FIG. 12, which includes FIGS. 12A-12F, illustrates the semiconductordevice during various stages of wafer level packaging in accordance withan embodiment of the present invention; and

FIG. 13, which includes FIGS. 13A-13C, illustrates a further embodimentof a process including wafer level processing to form a shield linebetween adjacent redistribution lines.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the embodiments andare not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of various embodiments are discussed in detailbelow. It should be appreciated, however, that the present inventionprovides many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative of specific ways to make and use the invention,and do not limit the scope of the invention.

The present invention will be described with respect to variousembodiments in specific contexts, namely implemented in power deviceapplications. Embodiments of the invention may also be implemented inother semiconductor applications such as memory devices, logic devices,analog devices, radio frequency (RF) devices, digital devices, and otherapplications that utilize metal lines, for example.

The inter-metal distance is a critical factor especially when metallines carry high voltages. For example, when a metal line carrying highvoltage is next to another metal line at a lower voltage, a largepotential difference develops across the dielectric layer separating thehigh voltage metal line and the low voltage metal line. The potentialdifference can result in a subsequent fail, which may be present beforeproduct operation, or may develop during product lifetime. However,present testing methodology cannot identify these defects. For example,conventional methods such as detecting a leakage current by applying avoltage between the high voltage metal line and low voltage metal linemay not find any difference between a part that fails subsequently and apart that will not fail. In various embodiments, the present inventionteaches a method, a design, and a device to overcome these problems.

A structural embodiment of the present invention will be described usingFIG. 2. Further structural embodiments will be described using FIGS. 4,5, 8, 9, 11F, 12F, and 13C. A method of testing the device will bedescribed using FIG. 6. A method of designing and/or fabricating thesemiconductor will be described using FIGS. 3, 10, 11, 12, and 13.

FIG. 1, which includes FIGS. 1A and 1B, illustrates defect densityassociated failure of different metal line structures.

Failure rate targets for various semiconductor process technologies suchas those used to produce automotive components are increasingly becomingmore stringent. For example, failure rates below 1 ppm are expected formany applications. On the other hand, higher voltages are used in manytechnologies, which increase the propensity for failure especially. Backend of the line (BEOL) metal lines, which may include capacitors, andalso front end of the line (FEOL) capacitors have difficulty meetingthese stringent reliability requirements solely by technologicalimprovements because reliability may be determined by extrinsic defectdensity levels, which may not be controlled by the semiconductor devicemanufacturer. For example, a dust particle may become deposited onto themetal lines shorting them. Alternatively, for example, processvariations may result in forming pockets of dielectric with poorisolation, narrowing/widening of metal lines, depositing particles thatintroduce a lower quality dielectric path between adjacent metal lines.For FEOL-devices and FEOL-capacitors a poor quality of the electrodes orthe dielectric might be the reason for extrinsic defects.

Referring to FIG. 1A, a typical break down characteristic for adielectric isolation is shown. The first curve 11 is representative of afirst dielectric thickness/spacing of metal lines while the second curve12 is representative of a second dielectric thickness/spacing of metallines. In the illustration, the first dielectric thickness/spacing ofthe first curve 11 is smaller than the second dielectricthickness/spacing of the second curve 12. In other words, using athicker dielectric isolation shifts curve 11 to curve 12. This ishowever at the cost of lower specific capacitance both for FEOL and BEOLcapacitors. The shallower branches of the curves (lower slope) arerelated to extrinsic breakdowns, while the steeper part of the curves isdue to intrinsic failures. The extrinsic breakdown may be a result ofprocess defects such as introduction of particles, variations in metalline widths, quality of dielectric, and others. The intrinsic breakdownis a physical limitation of the dielectric defined as the minimumvoltage that causes a portion of an insulator to become electricallyconductive. Accordingly, the breakdown in isolation, which occurs atmuch lower voltages, is due to extrinsic breakdown rather than the.Accordingly, the breakdown in isolation, which occurs at much lowervoltages, is due to extrinsic breakdown rather than the intrinsicbreakdown of the dielectric. Consequently, for a given defect density,the first curve 11 fails at a lower voltage than the second curve 12illustrating that the smaller gap distance has a higher probability offailure. There is no solution so far available for technologies withstringent (particles per million) ppm target, for example, less than afew ppm. To meet functional safety requirements, for example, where ashort between different voltage domains is critical, area consumingmeasures are used.

In other words, as illustrated in FIG. 1B, increasing the dielectricthickness vertically or laterally (as described above curve 13 has thelargest gap while curve 11 has the smallest) improves the reliability(improvement going from left to right on the x-axis of FIG. 1B).However, there is an area penalty associated with this improvement,which increases the fabrication costs. For FEOL devices this is mostlynot possible, because electrical parameters would also change withincreased dielectric thickness. Thus, there is a trade-off betweenimprovements in reliability versus the area consumed. In particular, agiven process may be constrained to move along the line illustrated inFIG. 1B. It would be advantageous to break this trade-off (shown by thesmall arrows). Embodiments of the present invention break this trade-offby identifying susceptible chips in a cost effect way, without consumingas much area as the above trade-off.

Another way of improving reliability is to increase the distance betweenthe metal lines with large voltage differences and using a burn-in toscreen out devices with the extrinsic defects. However, burn-in is aprocess in which a voltage slightly higher than operating voltage isused at a higher temperature for a long time. The applied voltage,although higher than operating voltage, is restricted to avoid completebreakdown of other the devices being tested simultaneously. However,these measures cost both too much area or test time. Additionally notall lines are accessible by a burn-in process.

FIG. 2, which includes FIGS. 2A and 2B, illustrates metal linesseparated by a shield line in accordance with an embodiment of thepresent invention, wherein FIG. 2A illustrates a vertical configurationand FIG. 2B illustrates a horizontal configuration.

In various embodiments of the present invention, a fast and efficientmethod to detect weak regions of the metal lines is presented.Additional shield lines are formed around metal lines in regions thatare more susceptible to shorting. The shield lines do not couple to anyother circuitry in the substrate. Therefore, the shield lines do notdraw any other type of leakage currents. For example, if the shield linewere to be connected to a functional circuit, even in OFF mode, theleakage current due to diodes, transistors may result in a noise floorof micro-amps. In contrast, the shield lines may be able to detectleakage currents as low as a few nano-amps. Consequently, very smallamount of current through the shield lines can be detected. Such leakagecurrents are indicative of regions that are susceptible to failure. Thisdramatic improvement of detection by over 1000×-10⁶× is a direct resultof not coupling the shield lines to any other circuit.

Referring to FIG. 2A, a shield line 20 is disposed between a first metalline 10 and a second metal line 30. The first metal line 10 and thesecond metal line 30 have a portion in which they run parallel to eachother and have a large voltage difference between them during operation.For example, the first metal line 10 may be configured to carry a highvoltage while the second metal line 30 may be configured to carry a lowvoltage.

As illustrated in FIG. 2A, a shield line 20 is disposed between thefirst metal line 10 and the second metal line 30. FIG. 2A alsoillustrates the inter-metal distance V13 between two metal lines in theabsence of shield lines. Relative to a design with now shield line, theinter metal distance V13′ between the first metal line 10 and the secondmetal line 30 may be increased due to the introduction of the shieldline 20. However, the increase in the inter-metal distance V13′ may notbe large compared to a design with no shield line.

The shield line 20 is not connected to any other circuit within thesubstrate. Accordingly, there are no parasitic circuits or leakagecircuits associated with the shield line 20. For example, a metal lineconnected to the substrate may have an associated leakage current evenif all the devices are not active. Advantageously, the shield line 20does not conduct such a leakage current because it is not coupled to anycircuitry on the chip. Rather, the shield line 20 is coupled only toexternal pads for applying a voltage to the shield line 20.

FIG. 2B illustrates an alternative embodiment in which the first metalline 10 is separated from the second metal line 30 by a shield line 20.In this case, the lateral distance L13 between first metal line 10 andthe second metal line 30 is controlled so that the shield line 20 may beinserted between these lines. However, again the introduction of theshield line 20 may not increase the inter-metal distance significantly.

FIG. 3 illustrates a flow chart of implementing the diagnostic methoddescribed in various embodiments of the present invention.

Referring to FIG. 3, the chip layout is provided in a first step 105.The chip layout may include the layout of the metallization layers andmay also include information regarding the lines carrying high voltages.Next, the layout is analyzed to identify critical regions in which metallines carrying high voltages are adjacent metal lines carrying lowvoltages during operation (second step 110). For example, a predefinedinter-metal distance may be used to identify such metal lines in regionsof the layout where the voltage difference exceeds a predefined limitone embodiment. In another embodiment, the predefined inter-metaldistance may be normalized by the potential difference. For example, incircuits having voltage lines carrying different voltages, the distancemay be normalized (e.g., by dividing the voltage difference by theinter-metal distance) to determine regions of the layout in which theelectric field across the dielectric material exceed a certain criticalnumber. Further, in various embodiments, more complicated schemes orrules may be generated, e.g., to determine the regions of the chip inwhich the metal lines are not immediately below or laterally in the samemetal level.

Next, as illustrated in FIG. 3, in the third step 115, the shieldregions are introduced. The shield lines perform no function duringoperation of the chip. Rather, the shield lines are test structures toidentify defects introduced during processing.

Referring to the fourth step 120, a process flow is generated tofabricate a semiconductor chip with the shield regions and thesemiconductor chip is thus fabricated (fifth step 135).

FIG. 4 illustrates a shield region formed around a power line inaccordance with an embodiment of the present invention.

Referring to FIG. 4, the shield line 20 may be formed in more than onemetallization layers in various embodiments. For example, the shieldline 20 may be formed between the power line (e.g., the first metal line10) and all other metal lines 50. As illustrated in FIG. 4, the shieldline 20 surrounds the first metal line 10 both laterally and vertically.The metal lines disposed below the shield line 20 may be coupled toother metal lines that are laterally disposed around the first metalline 10 through vias 40. Thus, in this embodiment, a more completeprotection of the first metal line 10 is possible.

FIG. 5, which includes FIGS. 5A and 5B, illustrates a shield regionformed around a power line in accordance with an embodiment of thepresent invention. FIG. 5A illustrates a cross-sectional view and FIG.5B illustrates a top view.

In a further embodiment, the shield line 20 may be formed as a padunderneath the first metal line 10 (FIG. 5B) so as to separate the firstmetal line 10 from all other metal lines 50.

FIG. 6, which includes FIGS. 6A and 6B, illustrates a semiconductordevice in accordance with an embodiment of the present invention.

Referring to FIG. 6A, the device may be tested during or afterfabrication in various embodiments. The testing may be performed afterfabrication and dicing in one embodiment. In another embodiment, thetesting may be performed prior to dicing. In yet another embodiment, thetesting may be performed during fabrication, for example, after thecompletion of a specific metal level, for example, that has the metalline to be tested.

As illustrated in FIG. 6A, the shield line 20 may be coupled to avoltage node that is configured to apply a voltage pulse Vs. The currentflowing through the shield line 20 may be measured using a currentmeter. In various embodiments, a high voltage may be applied through theshield line 20. In one embodiment, the high voltage may be applied asshort pulse. For example, in various embodiments, the high voltage maybe applied for less than a few 100 ns, and less than 10 ns in oneembodiment. In various embodiments, the high voltage may be applied fora time between about 1 ns to about 100 ns. In various embodiments, thehigh voltage may be about 10 V to about 100 V. In various embodiments, aratio of the peak voltage applied on the shield line 20 during stress tothe maximum peak voltage applied to the functional circuit duringoperation is about 1.2:1 to about 10:1. In various embodiments, a ratioof the maximum voltage applied during operation of the chip on the firstmetal line 10 to the maximum voltage applied during operation of thechip on the other metal lines 50 is about 5:1 to 100:1.

Because the shield line 20 is not coupled to any other circuit in thedevice, the current flowing through the shield line 20 is indicative ofleakage current associated with the extrinsic breakdown of the isolation25 between the first metal line 10 and the shield line 20. For example,in the absence of any leakage or defects, the current through the shieldline 20 as measured by the current meter may be less than 1 nA.Therefore, even a small increase in leakage current may be measurable.For example, weak devices that would otherwise pass all functional testsmay be identified. In contrast, if the shield line 20 is coupled to anycircuit, a certain amount of leakage current is unavoidable, whichinhibits the ability of the current meter to sense the leakage currentassociated with the breakdown of the isolation 25 between the firstmetal line 10 and the shield line 20

Further, since the first metal line 10 and the substrate may begrounded. Accordingly, the first metal line 10 and any other circuit inthe substrate is not subjected to the high voltage applied through theshield line 20. Therefore, there is no danger of damaging any of thecomponents of the circuit due to the high voltage.

FIG. 6B illustrates an alternative embodiment of measuring the integrityof the isolation region surrounding a high voltage power line.

In this embodiment, both the high voltage line and low voltage line arecoupled to a lower potential, such as a ground potential. For example,as illustrated in FIG. 6B, the first metal line 10 and all metal lines50 are coupled to ground. Consequently, if a high voltage pulse isapplied on the shield line 20, the isolation 25 between the first metalline 10 and the shield line 20 as well as the isolation 26 between theshield line 20 and all metal lines 50 is tested. Any leakage currentmeasured during the testing is indicative of problems in the isolation.

In various embodiments, the testing process may include the operationsdescribed in both FIGS. 6A and 6B. Thus, the location of the failure mayalso be identified so that process changes may be adopted to improvesubsequent process yield.

Advantageously using embodiments of the present invention, the shieldlines of all the critical regions may be shorted together so that largeareas of the semiconductor chip (or even all of the chip) may be testedsimultaneously in parallel.

In an alternative embodiment, the above testing may be performed as adiagnostic test at the start of the device, for example, after poweringon or after a time interval. An external or internal diagnostic program,for example, a built in self-test, may initiate this test. The leakageat the shield lines can then be used to monitor the integrity of theisolation regions of the chip. An increase in leakage current at theshield lines may initial the chip to take protective action, forexample, transition the chip to go into a safe state before amalfunction occurs.

FIG. 7 illustrates an alternative embodiment of testing the isolationregion around the high voltage power line.

In this embodiment, the high voltage pulse is applied on the first metalline 10 while the shield line 20 is grounded. The current flowingthrough the shield line 20 is measured.

FIG. 8, which includes FIGS. 8A-8C, illustrates top views of a highvoltage line running adjacent a low voltage line in accordance withembodiments of the present invention.

FIG. 8A illustrates a conventional layout in which the high voltageline, for example, a first metal line 10 carrying high voltage isadjacent another metal line, for example, a second metal line 30carrying a lower voltage. In accordance with embodiments of the presentinvention, a critical region 155 is identified which is susceptible toextrinsic breakdown of the isolation between the first metal line andthe second metal line. As illustrated, the lateral distance L13 betweenthe first metal line 10 and the second metal line 30 is less than apredefined critical distance (for example, as described previously).

Rather, than translating the metal lines to increase the distance L13between the first metal line 10 and the second metal line 30, asillustrated in FIG. 8B, a shield line 20 is introduced between the firstmetal line 10 and the second metal line 30. The shield line 20 is usedto test the integrity of the isolation between the first metal line 10and the second metal line 30. However, the distance L13′ between thefirst metal line 10 and the second metal line 30 in FIG. 8B is notsignificantly more than the distance L13 between the first metal line 10and the second metal line 30 in FIG. 8A. For example, in one or moreembodiments, the ratio of the distance L13 between the first metal line10 and the second metal line 30 in FIG. 8A to the distance L13′ betweenthe first metal line 10 and the second metal line 30 in FIG. 8B may beabout 1:1.1 to about 1:1.8, and less than 1:2 in various embodiments.

FIG. 8C illustrates a different configuration of the shield line inaccordance with an alternative embodiment of the present invention.

As illustrated in FIG. 8C, the shape of the shield line 20 may bemodified to test the integrity of the isolation region in more than onedirection. In FIG. 8C, the shield line 20 is formed in a concave shapesurrounding the high voltage metal line, i.e., the first metal line 10.

FIG. 9 illustrates an alternative structure of the shield line inaccordance with embodiments of the present invention.

In this embodiment, the shield lines 20 surround the first metal lines10 such that they are formed vertically above and below and laterally inboth directions. FIG. 9 illustrates a cross sectional view of thesemiconductor device 200 (not shown to scale), which may include activecircuitry disposed inside it. The active circuitry may include activedevice regions and includes necessary transistors, resistors,capacitors, inductors or other components used to form integratedcircuits. For example, active areas that include transistors (e.g., CMOStransistors) may be separated from one another by isolation regions,e.g., shallow trench isolation. Next, metallization is formed over theactive device regions to electrically contact and interconnect theactive devices. The metallization and active device regions togetherform a completed functional integrated circuit. In other words, theelectrical functions of the semiconductor device 200 can be performed bythe interconnected active circuitry. In logic devices, the metallizationmay include many layers, e.g., nine or more, of copper or alternativelyof other metals. In memory devices, such as DRAMs, the number of metallevels may be less and may be aluminum. For example, in FIG. 9, sixmetal levels comprising M₁, M₂, M₃, M₄, M₅, and M₆ are stackedvertically and connected by contact and via levels V₁, V₂, V₃, V₄, V₅,and V₆. In other embodiments, more or less number of metal and vialevels may be used.

The first via level V₁ comprising a plurality of vias of differentdesigns are disposed above the substrate 100 in a first insulating layer121, the first insulating layer 121 being disposed over the substrate100. The substrate 100 may include a semiconductor substrate and/or adielectric layer over a semiconductor substrate in various embodiments.Similarly, a second insulating layer 122 includes a plurality of metallines of different designs at a first metal level M₁. Similarly,subsequent layers of the insulating layer include a corresponding metallines or vias. For example, the third insulating layer 123 includes asecond via level V2, the fourth insulating layer 124 includes a secondmetal level M2, the fifth insulating layer 125 includes a third vialevel V3, the sixth insulating layer 126 includes a third metal levelM3, the seventh insulating layer 127 includes a fourth via level V4, theeighth insulating layer 128 includes a fourth metal level M4, the ninthinsulating layer 129 includes a fifth via level V5, the tenth insulatinglayer 130 includes a fifth metal level M5, the eleventh insulating layer131 includes a sixth via level V6, and a twelfth insulating layer 132includes a sixth metal level M6.

The pitch (distance between adjacent vias or between adjacent metallines) at each metal level is controlled by the minimum allowed spacingdefined for the particular technology.

In this embodiment, the shield lines 20 are formed during the formationof the metal lines for back end of the line processing. The shield lines20 are formed around the first metal line 10 that is carrying a highvoltage line in a region where other metal lines 50 are adjacent. Forexample, the region 155 of the semiconductor device is a region in whichthe high voltage metal line runs parallel to other lower voltage lines.

Therefore, this region may be identified as susceptible to extrinsicbreakdown of the isolation. As illustrated in FIG. 8A, the first metalline 10 may be surrounded by the shield lines 20. Further, as describedin prior embodiments, the shield lines 20 may not be coupled(electrically, inductively, capacitively, and resistively) to any othercircuit of the semiconductor device. In other words, the shield lines 20are electrically isolated from the first metal line 10 and any othercircuit in the semiconductor device. In particular, devices in which theshield lines 20 are not completely isolated (due to the breakdown of theisolation) fail the testing or screening process and are not part of thefinal working product. In a working product, the shield lines 20 areisolated from the first metal line 10 and all other metal lines 50.

FIG. 10, which includes FIGS. 10A-10F, illustrates the semiconductordevice during various stages of processing in accordance with anembodiment of the present invention.

First front end of the line processing is performed. Front end of theline processing includes forming the active regions, diffusion regionsand other regions within the semiconductor substrate 100. Subsequently,back end of the line processing is performed. Back end of the lineprocessing includes the metallization processes to interconnect thevarious components or devices in the semiconductor substrate 100.

In various embodiments, the metal lines may be formed using asubtractive process or an additive process such as a damascene process.For example, aluminum is deposited using a subtractive process whilecopper is deposited using an additive process. In a subtractive process,a blanket layer of metal is deposited, which is then structured usinglithography and etch process. In contrast, in an additive process, aninsulating layer is patterned to form openings, which are then filledwith a metal.

As an illustration, in various embodiments of the invention, the metaland via levels may be formed using a single damascene process or a dualdamascene process. In a single damascene process, a single layer ofinsulating material is patterned with a pattern for conductive features,such as conductive lines, conductive vias. In contrast, in a dualdamascene process, the vias and metals lines are patterned forconductive features and filled in a single fill step with a conductivematerial.

An example of this process using the single damascene process isillustrated in FIGS. 10A-10C for the formation of the vias in the firstvia level V₁. Referring to FIG. 10A, a first insulating layer 121 isdeposited over an etch stop liner (not shown) such as silicon nitride.The first insulating layer 121 is patterned using lithography. FIG. 10Aillustrates a patterned first insulating layer 121 and FIG. 10Billustrates this layer after via formation (via fill and planarization).The vias in the first via level V₁ may be formed by depositing an outerfirst conductive liner and then filling the remaining opening with aconductive material. The conductive liner may comprise, for example, CVDtitanium nitride and silicon doped tungsten, although in otherembodiments, the conductive liner may comprise other materials such astantalum, tantalum nitride, titanium, tungsten nitride, ruthenium or anycombinations thereof. The conductive material comprises tungsten,although in other embodiments, the conductive material may compriseother suitable materials such as copper, aluminum, tungsten, tantalum,titanium nitride, and ruthenium.

The first metal level M₁ is formed above the first via level V₁. Asecond insulating layer 122 is deposited over the first insulating layer121. A etch stop liner may be formed between the first and the secondinsulating layer 121 and 122. FIG. 10C illustrates the formation of themetal one pattern and FIG. 10D illustrates the structure after fillingof metal and subsequent planarization such as CMP, forming metal linesin the first metal level M1. An additional barrier layer (to preventmetal diffusion) and seed layer for electroplating may be depositedbefore the filling of metal. Examples of the barrier layer may besimilar to the conductive liner of the vias. After forming the barrierlayer, a seed layer may be deposited using a physical vapor deposition.Then, an electroplating process may be used to fill the opening to forma metal line. Subsequent metal and via levels are formed in a similarmanner. Metal level M₂, M₃ and via levels V₂, V₃ are illustrated in FIG.10E, which also shows the shield lines 20 in the third metal level M₃. Atypical fabrication process may use single or dual damascene processesor combinations thereof in building a multitude of metal and via levels.In some embodiments, large parts of the metal level such as third metallevel M₃ may be used for the shield lines.

FIG. 10F illustrates the semiconductor device after forming additionalshield lines 20 and the metal line configured to carry a high voltage,i.e., the first metal line 10. Additionally, in some embodiments, thetesting process may be performed before final fabrication, for example,in this case after the formation of the fifth metal level M₅. Thus, insome embodiments, the subsequent metal level may be used to seal off theshield line 20. For example, the eleventh insulating layer 131 and thetwelfth insulating layer 132 cover the shield lines 20 preventing theshield line 20 from being contacted after completion of the fabricationprocess.

FIG. 11, which includes FIGS. 11A-11F, illustrates the semiconductordevice during various stages of processing in accordance with anembodiment of the present invention, wherein FIGS. 11A, 11C-11Fillustrate cross-sectional view and FIG. 11B illustrates a top view.

In the embodiment described in FIG. 10, the shield lines are formed aspart of the conventional back end of the line processing. Accordingly,the regions used for shield lines cannot be used for interconnectingcomponents of the semiconductor device. In this alternative embodiment,the shield lines are formed after the completion of all the metal linesusing conventional back end of the line processing. Consequently, inthis embodiment, a thin interlayer metal may be deposited between highvoltage and low voltage lines in critical areas of the chip.

As illustrated in the top of FIG. 11B, the region 155 is identified asneeding an additional testing process. Referring to FIGS. 11A and 11B, ahard mask layer 220 is deposited over the semiconductor device andpatterned using lithography and etch processes to form openings 225. Thepatterned hard mask 220 exposes a passivation layer 210 disposed overthe semiconductor device. Using the patterned hard mask 220, ananisotropic etching process is performed to etch underlying insulatinglayers (FIG. 11C).

Referring to FIG. 11D, a fill metal 230 is deposited within the openings225. The fill metal 230 may partially or completely fill the openings225. For example, as illustrated in FIG. 11D, the fill metal 230 may beoverfilled. Next, as illustrated in FIG. 11E, the fill metal 230 isetched to remove any fill metal 230 from the top surface of thepassivation layer 210. FIG. 11F illustrates another embodiment showing apartially fill of the openings 225, for example, by using an increasedetch back or by controlling the deposition time.

FIG. 12, which includes FIGS. 12A-12F, illustrates the semiconductordevice during various stages of wafer level packaging in accordance withan embodiment of the present invention. FIG. 12 illustrates a magnifiedcross-sectional view of the semiconductor package during fabricationshowing front side metallization in accordance with an embodiment of theinvention.

Embodiments of the present invention may also be applied to front andback side redistribution lines. As an illustration, FIG. 12 disclosesthe application of embodiments of the present invention to Wafer LevelProcessing.

FIG. 12A illustrates a reconstituted wafer 300 comprising a plurality ofsemiconductor chips 320 having a plurality of contact pads 330. Theplurality of semiconductor chips 320 are embedded in an encapsulant 310,which at least partially encloses the plurality of semiconductor chips320. The encapsulant 310 provides mechanical and thermal stabilityduring subsequent processing.

Referring to FIG. 12B, a passivation layer 350 may be formed around thefront side metallization layer and patterned. In various embodiments,the passivation layer 350 is an insulating layer. In one or moreembodiments, the passivation layer 350 may comprise an oxide layer or anoxide/nitride layer stack. In other embodiments, the passivation layer350 may comprise silicon nitride, silicon oxynitride, FTEOS, SiCOH,polyimide, photoimide, BCB or other organic polymers, or combinationsthereof. An optional insulating liner may be formed above thepassivation layer 350. The optional insulating liner may comprise anitride layer, in one embodiment. In various embodiments, the optionalinsulating liner may comprise FTEOS, SiO₂, SiCOH, or other low-kmaterials.

Using a photolithography process, the passivation layer 350 is patternedto open the plurality of contact pads 330 on the last metal level of theplurality of semiconductor chips 320. However, the openings 340 are alsoformed in regions identified as being critical (adjacent high voltageand low voltage lines).

FIG. 12C illustrates a magnified view of the semiconductor packageduring fabrication after formation of front side redistribution layer inaccordance with an embodiment of the invention.

Referring to FIG. 12C, a conductive liner 360 is deposited. Theconductive liner 360 may include an adhesion layer, a barrier layer,and/or a seed layer. In various embodiments, the conductive liner 360 isdeposited using a deposition process to form a conformal layercomprising Ti, Ta, Ru, W, combinations thereof, or a nitride, silicide,carbide thereof. Examples of such combinations include TiN, TaN, and WN,and TiW. In various embodiments, the conductive liner 360 is depositedusing a chemical vapor deposition, plasma vapor deposition or atomiclayer deposition. In various embodiments, the conductive liner 360comprises a thickness of about 20 nm to about 200 nm. The conductiveliner 360 is a diffusion barrier metal and prevents out-diffusion ofcopper from the last metal line of the front side metallization layer aswell as prevents intermixing with further metallic layers.

The conductive liner 360 may include a conductive seed layer depositedover the barrier layer. The conductive seed layer covers the conductivebarrier layer. In various embodiments, the conductive seed layer isdeposited using a deposition process to form a conformal layer. Invarious embodiments, the conductive seed layer is deposited using achemical vapor deposition, plasma vapor deposition or atomic layerdeposition. In various embodiments, the conductive seed layer comprisesa thickness of about 20 nm to about 200 nm. The conductive seed layerprovides the seed layer for the growth during the subsequentelectroplating process. In various embodiments, the conductive seedlayer may comprise copper or other metals like Al, W, Ag, Au, Ni, or Pd.

As also illustrated in FIG. 12C, a thick photo resist layer 370 isdeposited over the conductive liner 360. In various embodiments, thephoto resist layer 370 is several microns thick, and varies from about 1μm to about 10 μm, in one embodiment. After deposition, the photo resistlayer 370 fills the openings previously formed in the passivation layer350. The photo resist layer 370 is exposed and developed. The patternedphoto resist layer 370 comprises patterns for redistribution metal linesand contact pads.

Referring next to FIG. 12D, a first redistribution metal line 410, asecond redistribution metal line 430, a shield redistribution line 420,and contact pads 405 are formed by electroplating a fill metal over theconductive liner 360 exposed between the patterned photo resist layer370. In various embodiments, the fill metal comprises copper, althoughin some embodiments, other suitable conductors are used. The conductiveliner 360 may comprise the same material as the material of thesubsequent metal lines to enable electroplating, in one embodiment. Invarious embodiments, the first redistribution metal line 410, the secondredistribution metal line 430, a shield redistribution line 420, andcontact pads 405 may comprise multiple layers, for example, Cu/Ni,Cu/Ni/Pd/Au, Cu/NiMoP/Pd/Au, or Cu/Sn, in one embodiment.

Referring next to FIG. 12E, the patterned photo resist layer 370 isstripped to expose the conductive liner 360. The exposed conductiveliner 360 is etched away, for example, using a wet etch chemistry. Thestructure at this stage is illustrated in FIG. 12F. Thus, the shieldredistribution line 420 may be used in the same manner as the shieldlines described in various embodiments.

FIG. 13, which includes FIGS. 13A-13C, illustrates a further embodimentof a process including wafer level processing to form a shield linebetween adjacent redistribution lines.

In this embodiment, compared to the previous embodiment, the shieldlines do not extend parallel to the contact vias. Rather, the shieldlines are formed only as redistribution lines above the passivationlayer 350. Accordingly, FIG. 13A illustrates the device after theformation of openings 340. FIG. 13B illustrates the device after theformation of the patterned photo resist layer 370 and the shieldredistribution line 420, the first redistribution metal line 410, thesecond redistribution metal line 430. FIG. 13C illustrates the deviceafter removing, i.e., etching the patterned photo resist layer 370.

As described in various embodiments, a material that comprises a metalmay, for example, be a pure metal, a metal alloy, a metal compound, anintermetallic and others, i.e., any material that includes metal atoms.For example, copper may be a pure copper or any material includingcopper such as, but not limited to, a copper alloy, a copper compound, acopper intermetallic, an insulator comprising copper, and asemiconductor comprising copper.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. As an illustration, the embodiments described in FIGS. 1-12may be combined with each other in alternative embodiments. It istherefore intended that the appended claims encompass any suchmodifications or embodiments.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. For example,it will be readily understood by those skilled in the art that many ofthe features, functions, processes, and materials described herein maybe varied while remaining within the scope of the present invention.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

What is claimed is:
 1. A method of testing a plurality of semiconductordevices, the method comprising: applying a stress voltage having a peakvoltage on a shield line disposed over a substrate comprising functionalcircuitry of a semiconductor device; applying a fixed voltage to a firstmetal line disposed above the substrate adjacent the shield line, thefirst metal line coupled to the functional circuitry and configured tobe coupled to a high voltage node during operation, the peak voltagebeing greater than a maximum fixed voltage, the shield line separatingthe first metal line from an adjacent second metal line configured to becoupled to a low voltage node during operation; measuring a currentthrough the shield line in response to the stress voltage; determiningthe current through the shield line of the semiconductor device; andbased on the determination, identifying the semiconductor device aspassing the test.
 2. The method of claim 1, wherein the peak voltage isat least 10V, and wherein the fixed voltage is a ground potential.
 3. Amethod of testing a plurality of semiconductor devices, the methodcomprising: applying a stress voltage having a peak voltage on a shieldline disposed over a substrate comprising functional circuitry of asemiconductor device; applying a fixed voltage to a first metal linedisposed above the substrate adjacent the shield line, the first metalline coupled to the functional circuitry and configured to be coupled toa high voltage node during operation, the peak voltage being greaterthan a maximum fixed voltage, the shield line separating the first metalline from an adjacent second metal line configured to be coupled to alow voltage node during operation; measuring a current through theshield line in response to the stress voltage; determining the currentthrough the shield line of the semiconductor device; and based on thedetermination, identifying the semiconductor device as passing the test,wherein a ratio of an absolute value of the magnitude of the peakvoltage to a maximum voltage at the high voltage node configured to beapplied during operation is 1.1:1 to 10:1.
 4. The method of claim 3,wherein a ratio of the maximum voltage at the high voltage nodeconfigured to be applied during operation to a voltage at the lowvoltage node configured to be applied during operation is about 5:1 to100:1.
 5. The method of claim 1, further comprising applying the fixedvoltage to the second metal line before measuring the current.
 6. Themethod of claim 1, wherein the shield line is not part of any functionalcircuit in the substrate and not coupled to any potential node in thesubstrate, wherein the shield line is configured to be isolated from allinternal potentials, and wherein the stress voltage is applied to theshield line through an exposed pad.
 7. The method of claim 1, whereinthe first metal line, the second metal line, and the shield line aredisposed in the same metal level.
 8. The method of claim 1, wherein thefirst metal line, the second metal line, and the shield line are eachdisposed in a different metal level.
 9. The method of claim 1, whereinthe stress voltage is applied to the shield line through a third metalline disposed over the shield line.
 10. The method of claim 3, furthercomprising applying the fixed voltage to the second metal line beforemeasuring the current.
 11. The method of claim 3, wherein the shieldline is not part of any functional circuit in the substrate and notcoupled to any potential node in the substrate, wherein the shield lineis configured to be isolated from all internal potentials, and whereinthe stress voltage is applied to the shield line through an exposed pad.12. The method of claim 3, wherein the first metal line, the secondmetal line, and the shield line are disposed in the same metal level.13. The method of claim 3, wherein the first metal line, the secondmetal line, and the shield line are each disposed in a different metallevel.
 14. The method of claim 3, wherein the stress voltage is appliedto the shield line through a third metal line disposed over the shieldline.
 15. A method of testing a plurality of semiconductor devices, themethod comprising: applying a fixed voltage on a shield line disposedover a substrate, the semiconductor device comprising a high voltagecircuitry and a low voltage circuitry, wherein the shield line is notcoupled to any functional circuitry within the semiconductor device;applying a stress voltage having a peak voltage to a first metal linedisposed above the substrate adjacent the shield line, the first metalline coupled to the high voltage circuitry, the shield line disposedbetween the first metal line and an adjacent second metal line coupledto the low voltage circuitry, wherein the peak voltage is greater thanan operating voltage of the high voltage circuitry; measuring a currentthrough the shield line in response to the stress voltage; determiningthe current through the shield line of the semiconductor device; andbased on the determination, identifying the semiconductor device aspassing the test.
 16. The method of claim 15, wherein the peak voltageis at least 10V, and wherein the fixed voltage is a ground potential.17. The method of claim 15, wherein the first metal line, the secondmetal line, and the shield line are disposed in the same metal level.18. The method of claim 15, wherein the first metal line, the secondmetal line, and the shield line are each disposed in a different metallevel.